发明名称 Semiconductor memory device
摘要 A semiconductor memory device provides a plurality of bit lines, a plurality of memory cells each of which is connected to a pair of different bit lines, a plurality of common word wires each of which is connected to the memory cells via a transmission gate. A characteristic feature of the present invention is to provide at least one amplifier between two memory cells which are connected to a word line or a bit line so as to prevent an increase of the access time of the memory device.
申请公布号 US4262340(A) 申请公布日期 1981.04.14
申请号 US19790092858 申请日期 1979.11.09
申请人 FUJITSU LIMITED 发明人 SASAKI, NOBUO;KOBAYASHI, YASUO;IWAI, TAKASHI;NAKANO, MOTOO
分类号 G11C11/41;G11C5/06;G11C8/08;G11C11/408;G11C11/412;G11C11/418;H01L27/11;(IPC1-7):G11C11/40 主分类号 G11C11/41
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