发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device provides a plurality of bit lines, a plurality of memory cells each of which is connected to a pair of different bit lines, a plurality of common word wires each of which is connected to the memory cells via a transmission gate. A characteristic feature of the present invention is to provide at least one amplifier between two memory cells which are connected to a word line or a bit line so as to prevent an increase of the access time of the memory device.
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申请公布号 |
US4262340(A) |
申请公布日期 |
1981.04.14 |
申请号 |
US19790092858 |
申请日期 |
1979.11.09 |
申请人 |
FUJITSU LIMITED |
发明人 |
SASAKI, NOBUO;KOBAYASHI, YASUO;IWAI, TAKASHI;NAKANO, MOTOO |
分类号 |
G11C11/41;G11C5/06;G11C8/08;G11C11/408;G11C11/412;G11C11/418;H01L27/11;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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