| 摘要 |
PURPOSE:To enable a nitriding process for forming a desired nitride film on a semiconductor surface by a method wherein a laser beam is irradiated on the surface of substrate such as semiconductor, etc. in N2 plasma to which a high frequency electromagnetic field is applied so that the surface reacts with N2 plasma. CONSTITUTION:The equipment consists of a laser oscillator 1, a lens 3, a plasma generation chamber 5, gas inlet 6, a high frequency electromagnetic field generator 9, vacuum discharge opening 7, etc. The substrate 4 such as semiconductor or metal is placed in the chamber 5 in nitrogen atmosphere, then a high frequency electromagnetic field is applied so that nitrogen plasma is generated. The laser beam is irradiated on the surface of the substrate 4 so that the substrate surface and N2 are reacted each other to form a normal semiconductor nitride film. Preheating of the substrate 4 by a heater 11 increases the thickness of nitride film when the same laser beam is used. The nitride film with a desired pattern can be formed by irradiating or scanning the laser beam on the substrate surface through a mask. |
