| 摘要 |
PURPOSE:To obtain a photomask with high accuracy by a method wherein a metallic thin film on a predetermined place of a mask substrate plate is removed by etching to form a standard mark and electric beam is controlled by using this mark as a standard. CONSTITUTION:By the standard mark provided on the mask substrate plate, the focusing of electric beam, the determination of an exposing position or the correction of lag are controlled. For example, the metal thin film 2 and a resist film 3 are provided on a glass substrate plate 1. A cross pattern 4 is provided to a predetermined position A, B, C, D of four corners on the resist film 3 and the metallic thin film 4 of that part is etched and removed by conventional light exposure and, thereafter, the resist film is removed by a solvent to obtain a standard mark 5A or the like. Moreover, a resist film 6 for electric beam exposure is coated. This base plate 7 of this mask is fixed to a base plate holder on a XY moving stage of an electron beam exposing apparatus and electron beam is irradiated and scanned. The position of the standard mark 5A or the like can be detected by the differential of electron irradiation coefficient of the glass substrate plate 1 and the etallic thin film 4 and various correcting controls can be carried out. |
