| 摘要 |
PURPOSE:To obtain an optical memory of high sensitivity and large capacity easily by forming an area containing H and that containing no H on an amorphous semiconductor thin film and then by storing binary information making use of optical characteristic differences between both the areas. CONSTITUTION:On transparent substrate 1 made of glass, etc., for a read by using transmitted light or substrate 1 of metal, etc., for a read by using reflected light, amorphous semiconductor thin film 2 such as an amorphous silicon thin film is provided. On film 2, areas 4 containing no hydrogen are formed desired intersection points M11, M12... and M21, M22... between for lines X1, X2... and column lines Y1, Y2... and areas 3 containing hydrogen are formed at other positions. For example, amorphous semiconductor film 2' containing hydrogen is provided on substrate 1 by glow discharge of SiH4, etc., and irradiation position M12 is heated up to 400-600 deg.C by electron beam 5, etc., to form areas that contain no hydrogen. A difference in light absorption factor from about 0.6mu to the near infraredray wavelength range between the part containing hydrogen and that containing no hydrogen goes into not less than one figure, and a difference in refractive index is similarly large, so that pieces of binary information that correspond to ''1'' and ''0'' can be stored. |
