| 摘要 |
PURPOSE:To obtain thin film patterns having flat and photoetched surfaces by applying a lift-off method wherein the reverse use of side face photoetching is also applied and a photoetching process causing no side face photoetching is combined. CONSTITUTION:An SiO27, an Si3N48 and a PSG9 are stacked on an Si substrate 1 and a resist mask 10' is formed. The mask 10' generates a flawed section by developing treatment. An ion is vertically irradiated on the substrate to selectively remove the PSG9. Mext, Al is evaporated with the same thickness of the remaining PSG9' to form Al patterns 12a, 12b. Next, the resist 10' is removed by applying an ultrasonic wave in acetone to remove an Al film 12. And a semiconductor chip having an Al film with a flat surface will be obtained and the accident of the breakage of a wire will be prevented. |
