| 摘要 |
PURPOSE:To eliminate the temperature drift and displacement of a pair of lead wire groups and to reduce the size of a semiconductor device of two chip and one package type by bonding a pair of lead wire groups of approximately equal shape through an adhesive layer having an insulating property in a back-to-back manner when forming the semiconductor device. CONSTITUTION:First lead wire group 31 is formed of a tab 311 and a plurality of lead wire pieces 312 formed on one plane surface, and second lead wire group 32 is similarly formed of a tab 321 and a plurality of lead wire pieces 322. Then, semiconductor chips 34, 35 such as transistors or the like are secured on these tabs 311, 322 respectively, and are connected as predetermined with bonding wires 36, 37 respectively. Thereafter, these lead wire groups 31, 32 are bonded in a back-to-back manner using an insulating adhesive layer 33 while directing the chips 34, 35 outwardly, and the entirety is molded with resin 38. Thus, the thermal transfer difference between the lead wire groups 31 and 32 may become at minimum, and an unbalance therebetween due to the temperature drift can be eliminated. |
