| 摘要 |
PURPOSE:To prevent the deep intrusion of metal in a semiconductor device by froming an impurity region having the same conductivity type as the surface of a semiconductor region but a density of higher than 3X10<21> pieces/cm<3> in the surface portion of the semiconductor region when mounting an aluminum wiring metal on the surface of the region. CONSTITUTION:An SiO2 film 2 having a sufficient thickness as a mask for an ion implantation is coated on a P type Si substrate 1, and unnecessary portion is etched and removed therefrom. Then, a thin SiO2 film 4 is coated on the portion removed with the film 2, As impurity ions are implanted, the film is driven in, and an N type region 3 having a depth of 0.5mum or the like is formed therein. Thereafter, P impurity ions are implanted to the region at which aluminum electrode is mounted of the region 3, and a region 8 having a density of 3X10<21> pieces/cm<3> or higher and a depth of 0.2-0.3mum is formed therein. Then, an aluminum layer is coated on the entire surface, unnecessary portion is etched and removed, as an electrode wire 7 making contact with the region 8, is annealed at 450 deg.C in N2 atmosphere for 30- 60min, and an ohmic contact having no intrusion of aluminun into the the region 3 can be obtained. |
