| 摘要 |
PURPOSE:To enhance the integrating density of a semiconductor integrated circuit by employing a laminate of a metallic layer and a high melting point metallic silicon layer as a first diffused region layer when forming a multilayer wire for an I<2>L, and using an ordinary metallic layer for a second layer making contact partly therewith. CONSTITUTION:An N<+> type buried region 3 is diffused in a P type Si substrate 1, an N type layer 2 is epitaxially grown on the entire surface including the region 3, an N<+> type color layer 4 intruding the periphery of the region 3 is formed, and the layer 2 is partitioned in an island state. A P type injector region 5 and a P type base region 6 are diffused in the layer 2 becoing an island, and an N type collector region 7 is formed in the region 6. Thereafter, an insulating film 8 is coated on the entire surface, and openings are perforated at the respective regions. When a first metallic wiring layer is coated thereon, a laminate of a thin metallic layer 9 made of Pt, Mo, Ta or the like and a metallic layer 10 made of Si compound of MoSi2, W or the like is used. Then, an oxide film 11 is coated thereon as an ordinary method, an opening is perforated thereat, and a second aluminum wiring layer 12 making contact with the laminated on the region 5 is formed thereon. |
