Schottky diode with low noise - obtd. by surrounding metal layer on semiconductor with semi-insulating passivating layer

摘要

The diode consists of a semiconductor which is coated with a metal layer (4); and layer (4) is surrounded by a semi- insulating layer (3) providing passivation. The passivating layer (3) pref. has a resistance of 103 to 109 ohm.cm; and pref. consists of a layer (3) less than 1 mu thick, covered by a thick layer of insulation (20). The semiconductor is pref. Si, whereas layer (3) is pref. doped amorphous Si; or poly Si doped with O2, Fe or Cr; or a polycrystalline II-V cpd., esp. GaAs or GaAlAs; or GaN. Alternatively, the semiconductor substrate is GaAs, in which case layer (3) is amorphous Si; poly Si doped with O2, Cr or Fe; or GaN. The structure may also be used for the gage of an FET.