Microwave field effect transistor - has wedge shaped substrate, thickening from source to drain, to maintain uniform electric field below grid electrode

摘要

The transistor has a constant field in the depletion region, reduced transit time and is able to sustain drain source voltage. A plane semiconductor substrate is profiled on the same side as the source, gate and drain electrodes to which they are aligned. The region in the substrate under the gate electrode through which carriers move, when the gate diode is reverse biased, is a wedge thickening from the source to the drain. The gate electrode is metallic and forms a Schottky diode with the substrate. The source and drain electrodes are separated by an inclined plane, with a ridge or a furrow supporting the gate. The dimensions of the transistor are largely sub-millimetric, the length of the gate electrode for a 10 Gigahertz device is of the order of a micron.