| 摘要 |
PURPOSE:To prevent the separation of an oxide film from a barrier making metal layer of molybdenum, by interposing a metal film layer which has high adhesive power to the molybdenum film and the oxide film. CONSTITUTION:An oxide film 12 is produced on a semiconductor substrate 11. A metal film layer 17 is made of a metal such as titanium, which has high adhesive power to the oxide film 12 and molybdenum, on the oxide film. A barrier making metal film 14 of molybdenum, a nickel layer 15 and a metal 16 are then sequentially provided. A barrier 13 is produced between the semiconductor substrate 11 and the barrier making metal film 14. |
