| 摘要 |
PURPOSE:To reduce a reactive current and heighten the density of integration, by providing the collector and base of a horizontal bipolar unit of SITL and the gate and source of a vertical SIT as common regions and placing the emitter of the bipolar unit so that the emitter is surrounded by the gate. CONSTITUTION:An inverted vertical SIT is composed of an N<+> type source 12, an N<-> type channel 13, a P<+> type gate 14 and N<+> type drains 11a, 11b. A horizontal bipolar unit is composed of a P<+> type emitter 15, an N<-> type base 13a and a P<+> type collector 14. The P<+> type emitter 15 is surrounded by the P<+> type gate 14 together with the interposed N<-> type base 13a in the same manner as the N<+> type drain 11a is surrounded. According to this constitution, almost all of positive holes injected through the side faces and bottom of the P<+> type emitter 15 reach the P<+> type gate 14 to reduce a reactive current. |
