| 摘要 |
PURPOSE:To obtain a fine pattern of high accuracy, by leaving a part of a resist film, which is in contact with a worked piece, in an opening provided in the film and by applying directional particle energy to the left film part to remove it when making the pattern in the resist film by chemical etching. CONSTITUTION:A photoresist film 2 is coated on a base film 1 which is a worked piece whose surface is to be provided with a pattern by chemical etching. Exposure to light or an electron beam or the like is effected. The film 2 is then developed and dissolved to provide an opening 3. At that time, a film part 2 is left as a film 4 of deliberately reduced thickness at the bottom of the opening 3. Directional particle energy of plasma, ions or the like is applied to the thin film 4 to remove it. At the same time, the surface portion 5 of the film 2 is removed to make the resist pattern having the fine opening 3. According to said method, no overhang and cutting-in take place at the bottom of the opening 3. Therefore, the opening is made in neat shape. |
