| 发明名称 |
PRODUCTION OF LAYERS OF CRYSTALLINE SILICON |
| 摘要 |
<p>Relates to a method for producing a product comprising crystalline silicon on a sodium thallium type substrate by application of silicon atoms gradually to that substrate whereby oriented overgrowth occurs and also to the product produced by said method. The product is useful in semiconductor and solar cell applications.</p> |
| 申请公布号 |
GB1587753(A) |
申请公布日期 |
1981.04.08 |
| 申请号 |
GB19770045047 |
申请日期 |
1977.10.28 |
| 申请人 |
SOTEC CORP |
发明人 |
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| 分类号 |
C30B23/00;C30B25/02;C30B25/18;C30B29/06;H01L21/20;H01L21/203;H01L21/205;H01L21/208;H01L31/04;H01L31/18;(IPC1-7):23C13/02 |
主分类号 |
C30B23/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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