A method of vapour phase growth and apparatus therefor.

摘要

To form a film on a substrate 7 placed on one of two electrodes 4 and 5 arranged opposite to one another within a reaction chamber 1 to which reactive gases are supplied, through an inlet 3, electrical power is applied to the electrodes 4 and 5 to generate a plasma between the electrodes.
<??>The electrical power is supplied at two different frequencies, from two generators 13 and 113. One frequency is a "high" frequency of 5 MHz or more, the other is a "low" frequency of 1 MHz or less.
<??>By the application of power at the different frequencies, a film can be formed at a relatively high deposition rate but with only a small number of pinholes.