发明名称 PRODUCING HIGH HEATTSTABILITY RELIEF STRUCTURE
摘要 <p>The present invention relates to a method for the preparation of highly heat-resistant relief structures by applying radiation-sensitive soluble polymer precursor stages in the form of a film or a foil to a substrate; irradiating the film or the foil through negative patterns with actinic light or by deflecting a light, electron or ion beam; removing the non-irradiated film or foil portions; and optionally, by subsequent annealing; as well as to the use of the relief structures made in this manner. It is provided for this purpose to use precursor stages of polyimidazoles and polyimidazopyrrolones in the form of addition products of olefinically unsaturated monoepoxides on amino group-containing polycondensation products of aromatic and/or heterocyclic tetraamino compounds with dicarboxylic-acid chlorides or esters, or on amino group-containing polyaddition products of the tetraamino compounds and tetracarboxylic-acid dianhydrides. The relief structures prepared by the method according to the invention are suited particularly for use as resists, surface coating material and insulating material.</p>
申请公布号 JPS5635132(A) 申请公布日期 1981.04.07
申请号 JP19800115318 申请日期 1980.08.21
申请人 SIEMENS AG 发明人 HERUMUUTO AANE;EBAAHARUTO KIYUUN;ROORANTO RUPUNAA
分类号 G02F1/1337;G03F7/038;H01L21/027 主分类号 G02F1/1337
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