| 摘要 |
PURPOSE:To make ir possible to provide the semiconductor builtin with the photocell having a large light receiving area by a method wherein the photocell portion is superpased on a circuit portion that formed on the surface of a semiconductor substrate. CONSTITUTION:The curcuit portion 2 is formed on the surface of the semiconductor substrate 1. A stabilized film 3 is coated on the circuit 2, an aluminum film 4 is formed thereupon. Further, an Si film 5 and an SiO2 film 6 are formed on the alumium film 4, the photocell portion is formed on the upper layers of the circuit portion 2 by selectively contacting electrodes 7, 7' on the Si film 5. |
