| 摘要 |
PURPOSE:To prevent occurrence of troubles such as erosion, cutting, etc. of an Al wiring by a method wherein a noncorrosion etching solution is used for the Al wiring when performing an etching on a Ti layer to be used as barrier metal by using a bump electrode as a mask. CONSTITUTION:After making an opening on a PSG layer 4, a Ti layer 11 to be used as a barrier metal is evaporated on the whole surface, and then on this Ti layer 11 a Cu layer 12 to be used for betterment of contact between metals is formed by performing evaporation and lamination. Then, on this Cu layer 12, a resist film 13 is coated and an opening is made on the bump formed section of the film 13. Next, an Au bump 15 is formed by performing a plating using the metal layer of this opening 14 as an electrode and then the resist film 13 is exforiated. Lastly, an etching is performed on the Cu layer 12 and the Ti layer using the bump 15 as a mask. The etching solution used in said etching has an incorrosive property. |
