| 摘要 |
PURPOSE:To form a stepped elimination section and to form a high reliability Al electrode by consisting a resist film as a mask on the upper layer of multilayer structure thin films wherein the resist film is extended by heating and flowing the resist after selective etching. CONSTITUTION:A field oxide film 102, source and drain regions 103, 104 are formed on a P type silicon substrate 101. Next, oxide films 105 are formed on the places except suitable section for gate. A silicon nitride film 107 is evaporated on the whole surface after forming an extremely thin silicon oxide film 106 on the suitable section for gate. Next, a photo resist pattern 108 to form contact holes is formed on the nitride film 107 and apertures are formed to the nitride film 107 on the regions 103, 104. Next, a photo resist 108 is extended and flowed to around the section eliminating the nitride film by heating and melting the photo resist 108. An aluminum electrode layer 111 is formed by consisting a resist 108' formed after flowing the photo resist 108 as a mask and by eliminating the oxide films 105. In this way, a stepped elimination section is formed. Therefore, a high reliability electrode will be formed by eliminating the severance and sinkage of the electrode. |
