| 摘要 |
PURPOSE:To elevate the reliability and to attain the high precision of the semiconductor device by a method wherein the form of a poly-crystalline silicon resistor or a fuse is made to be L-shape, and especially the polycrystalline silicon thermal oxidation film on the bent part is removed. CONSTITUTION:The L-shaped polycrystalline silicon thermal oxidation film 12 formed on an insulating film 14 on the main face of a semiconductor substrate 15 is removed, and is covered only with an insulating film 13 formed by vapor growth. Therefore as the part to be cut by melting is limited only to a bent part 6, the polycrystalline silicon can be cut by melting without damaging the insulating film cover 12 to prevent the reduction of reliability caused by an injury in the insulating film cover. |
