| 摘要 |
PURPOSE:To easily obtain the LED having high green light emitting efficiency by employing a deep energy level density low N type GaP region. CONSTITUTION:A predetermined temperature difference is provided in a Ga-P solution, phosphorus pressure in optimum range is applied to the solution, stock is dissolved in the high temperature portion of the solution retained at predetermined temperature, and is epitaxially grown in the low temperature portion thereof. In this manner, N type GaP region added with no nitrogen having approx. 1X10<13>cm<-3> of deep energy level density can be obtained with activation energy of approx. 0.65eV. The GaPLED forming the N type GaP region, a P type region having acceptor density implanted to sufficient amount of holes into the N type region, and P-N junction incorporates very high light emitting efficiency. Since no nitrogen is added thereto, a light having visually clear peak wavelength of less than 5,600Angstrom can be easily generated in high light emitting efficiency. |
