| 摘要 |
PURPOSE:To reduce the production cost and the size of the full-wave rectifying semiconductor device by forming a plurality of reverse conductivity type regions in a one-conductivity type semiconductor substrate as rectifying circuits, combining them and connecting them as the full-wave rectifier. CONSTITUTION:A plurality of segmented N type regions 2a, 2b, 2c are diffused in a P type semiconductor substrate 1, and P type regions 3a, 3b are formed in one 2a of the regions 2a, 2b, 2c. In this manner rectifying circuits are formed of these regions and the substrate, the regions 2a, 3b are commonly connected as one AC input terminal a. The regions 2b, 3b are commonly connected as another AC input terminal c, a positive output terminal b is led out from the exposed region 2c between the regions 3a and 3b, and a negative terminal d is led out from the exposed surface of the substrate 1. In this manner a single-phase circuit is formed on each of the substrates, is combined, and can be simplified in the full-wave rectifier. |
