发明名称 CMOS OPERATIONAL AMPLIFIER WITH REDUCED POWER DISSIPATION
摘要 Operational amplifier (10) comprised of MOSFET elements which provides for a variable drive for an output stage (18) that results in lower power dissipation and increased gain factor over comparable circuits using constant bias drive for the output stage. A bias section (14) comprised of complementary MOS elements (24, 26) is connected to a single MOSFET (40) that furnishes constant current to the signal input section of a differential amplifier section (20). The output of this differential amplifier is furnished by one path directly to one complementary MOSFET element (72) of a high impedance output stage and by another path to a level shift section (16) which provides an output to a second complementary MOSFET element (80) of the output stage. Thus, the circuit functions under class A-B operation at low power dissipation and provides high open loop gain. Additional embodiments of the invention utilize three MOSFET elements (104, 106, 108) in the level shift section or an additional output stage having an NPN transistor (120) in combination with an N channel MOSFET (122).
申请公布号 WO8100937(A1) 申请公布日期 1981.04.02
申请号 WO1980US01129 申请日期 1980.09.02
申请人 AMERICAN MICROSYSTEMS INCORP 发明人 HAQUE Y
分类号 H03F3/16;H03F3/18;H03F3/26;H03F3/30;H03F3/45;(IPC1-7):03F3/16;03F3/45 主分类号 H03F3/16
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