发明名称 ION IMPLANTING APPARATUS
摘要 PURPOSE:To implant ions highly accurately by moving the position of a collector slit in response to the variation of the strength of the magnetic field of the electromagnet which is used for mass separation. CONSTITUTION:An ion beam 2, which is generated in an ion source 1, is accelerated, and is separated by a mass seperating electromagnet 3. The beam 2 of the only specific type of the ions passes a slit 4. If the strength of the magnetic field of the electromagnet 3 is slowly varied, the beam 2 moves laterally. If the slit 4 is moved at the same time, only the specific type of beam can be always passed. When the specific type of beam which has passed the slit in this way strikes the disk 8 which is rotating at a specified location, the beam scans targets 7 which are arranged at the location whose rotating diameter is the same as that of the disk 8. If a step motor 10 which moves on the slit 4 and the scanning power supply which varies the strength of the magnetic field of the electromagnet are electrically correlated, the highly accurate implantation which is structurally stable can be performed.
申请公布号 JPS5632722(A) 申请公布日期 1981.04.02
申请号 JP19790107225 申请日期 1979.08.24
申请人 HITACHI LTD 发明人 TAYA TOSHIMICHI
分类号 H01J37/317;C23C14/48;C30B31/22;H01L21/265 主分类号 H01J37/317
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