| 摘要 |
PURPOSE:To obtain the semiconductor integrated circuit adapted for a peripheral circuit of a memory or a logic circuit with an IC having narrow width by arranging a plurality of gate electrodes and an MOS element having wide width of diffused layer laterally in width direction. CONSTITUTION:A flip-flop type circuit used for a sense amplifier is formed of transistors Q1, Q2 and a bit line D and the like, and the bit line D and a D bar are connected through contacts N1, N2 to the gates of the transistors Q1, Q2. Since the channel width between the transistors Q1 and Q2 should be increased by the request of the sensitivity of a sensor in this configuration, gate and source diffused layers are so arranged as to align at the channels in width direction, and formation of an amplifier using large channel width can be enabled in narrow width. Further, they are brought into close contact with the contact N3 for connecting the metallic wire of a clock phi to the common nodal point of the flip-flop and a gate electrode respectively. |
