发明名称 Semiconductor integrated circuit protection arrangement.
摘要 <p>An array of semiconductor circuits (16, 26, 96) integrated in a single semiconductor body substrate, each circuit (16, 26, 96) having a separate input terminal (16.5, 26.5 96.5), is protected from overvoltages in the inputs by means of a separate diode (17, 27, 97) for each such circuit connected between its protected input node and a reference terminal (Voo) in common with all the other circuits. In addition, the high current path of a single auxiliary transistor (T,) is arranged to provide, in the presence of overvoltages, a low resistance path between the reference terminal (VDD) and the wide area substrate contact Vss in order to protect the input nodes in case of overvoltages when reference terminal (Voo) is disconnected ("floating").</p>
申请公布号 EP0026056(A1) 申请公布日期 1981.04.01
申请号 EP19800303045 申请日期 1980.09.02
申请人 WESTERN ELECTRIC COMPANY, INCORPORATED 发明人 WITTWER, NORMAN CARL
分类号 H03F1/52;H01L27/02;H01L27/06;H01L29/78;H02H7/20;H03F1/42;H03K17/0812;(IPC1-7):01L23/56;02H7/20;01L27/02 主分类号 H03F1/52
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