发明名称 |
Photoresist O-quinone diazide containing composition and resist mask formation process |
摘要 |
A resist composition includes an alkali soluble resin, a light sensitive diazo compound, and a thermally activated free radical initiator. Resist masks are formed from the above composition by providing a layer of resist on a substrate, exposing the layer patternwise to radiation, removing portions of the layer with a developing solution, and heating the remaining portions of the layer at a temperature which activates the initiator and cross-links the resist to improve the physical characteristics of the resist layer and minimize pattern distortion.
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申请公布号 |
US4259430(A) |
申请公布日期 |
1981.03.31 |
申请号 |
US19760699927 |
申请日期 |
1976.06.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KAPLAN, LEON H.;ZIMMERMAN, STEVEN M. |
分类号 |
G03F7/022;(IPC1-7):G03C1/54;G03C5/00 |
主分类号 |
G03F7/022 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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