| 发明名称 |
High speed lateral bipolar transistor |
| 摘要 |
A bipolar transistor NPN structure (20) is constructed at a major surface of a silicon body with a P-type polycrystalline silicon electrode (13) contacting a P-type base zone (13.6). Excess acceptor impurities from the polycrystalline silicon electrode (13) are diffused into the base zone (13.6) in order to tailor its conductivity profile.
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| 申请公布号 |
US4259680(A) |
申请公布日期 |
1981.03.31 |
| 申请号 |
US19800141119 |
申请日期 |
1980.04.17 |
| 申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
LEPSELTER, MARTIN P.;SZE, SIMON M. |
| 分类号 |
H01L29/73;H01L21/225;H01L21/331;H01L23/532;H01L29/08;H01L29/10;H01L29/423;H01L29/735;(IPC1-7):H01L29/04;H01L29/72 |
主分类号 |
H01L29/73 |
| 代理机构 |
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