发明名称 TYPE OF SUPERLATTICE
摘要 <p>A superlattic structure is disclosed in which alternating layers of semiconductor alloy materials provide a one dimensional spatial periodic variation in band edge energy. A first layer of the superlattice device is an alloy including a first Group III material and a first Group V material, preferably In As, while the second layer is an alloy including a second Group III material different from the first Group III material and a second Group V material different from the first Group V material, and preferably GaSb. In the superlattice structure the valence band of the second alloy is closer to the conduction band of the first alloy than it is to the valence band of the first alloy.</p>
申请公布号 CA1098624(A) 申请公布日期 1981.03.31
申请号 CA19780313473 申请日期 1978.10.16
申请人 US ARMY 发明人 ESAKI, LEO;TSU, RAPHAEL;SAI-HALASZ, GEORGE A.;CHANG, LEROY L.
分类号 H01L29/15;(IPC1-7):01L29/04 主分类号 H01L29/15
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