| 摘要 |
PURPOSE:To prevent a disconnection by a method wherein the second layer wiring is overlapped on the first layer of MoS2 through the two layers of Si3N4 and CVD SiO2 in a multilayer wiring. CONSTITUTION:The MoSi2 wiring 1 is formed on an SiO2 film 4 and the two layers of Si3N4 10, CVD SiO2 2 are overlapped. When a resist mask 3 is formed, the SiO2 film 2 is etching eliminated by NH4F+HF, the Si3N4 film 10 prevents the over etching, and then when the Si3N4 film 10 is etched by hot phospheric acid, the SiO2 film 4 under the MoSi film 1 is not etched. In the following, the second layer of polycrystalline Si wiring 11 is made. According to this constitution, since the over etching is not produced on the SiO2 film 4 under the layer of MoSi2 film, consequently the disconnection is not produced on the second layer wiring 11, the reaction with MoSi2 and the deterioration by which O2 is penetrated into a space formed by the over etching at the time of a high temperature processing can be prevented as well. |
