| 摘要 |
PURPOSE:To obtain the device having high light emitting efficiency by epitaxially growing an N type GaAlAs layer, a III-V group layer containing one or more kinds of Si and P type or N type impurites and a P type GaAlAs layer on an N type III- V group semiconductor substrate in a liquid phase and obtaining the double hetero structure. CONSTITUTION:At first, an N type GaAlAs layer 2 is epitaxially grown in a liquid phase in the slowly cooling process from the normal temperature at a decreasing speed of 1 deg.C/min on an N<+> type GaAs substrate 1 by using the solution comprising Ga, Al, As, and Te. Then, P type GaAs active layer 3 is epitaxially grown in a liquid phase on the layer 2 by slowly cooling at 1 deg.C/min by using the solution comprising Ga, GaAs, Si, and Te at the relatively low temperature of 800 deg.C. Thereafter, a P type GaAs layer 4 is grown on the layer 3, and an ohmic electrode 6 with a specified pattern is formed on the layer 4. An ohmic electrode 5 is deposited on all the surface of the back of the substrate 1. In this constitution, the compensation ratio of the active layer 3 is accurately adjusted, and the wavelength of the emitted light can be controlled at high light emitting efficiency. |
