| 摘要 |
PURPOSE:To simplify the process in forming the electrodes on the Schottky-type FET; by using an electrode material such as Ta, Nb, V, and the like, which have the smaller reactive property with Au and the diffusion suppressing effect of Ga; and obtaining electrodes and a bonding pad at the same time. CONSTITUTION:An N type buffer layer 32 and an N type active GaAs layer 33 are laminated on a semi-insulating GaAs substrate 31, and epitaxially grown. The layer 33 is of a mesa shape. Then, a source region and a dreain region are formed on the layer 33; and the layered ohmic electrodes composed of 34 and 36, and 35 and 37, comprising AuGe alloy and Pt, are formed on both regions. All the surface is covered by an SiO2 film 38. Thereafter, the etching is performed by using the mask of a photoresist film 39, and a hole is perforated in the film 38. Then, Ta layers 40-43 and Au layers 44-47 are deposited on all the surface. Thereafter, the film 39 is removed together with the Ta layer and the Au layer which are deposited on the film 39. The Schottky electrodes comprising the Ta layer and the Au layer are remained on the layered electrodes which have been formed beforehand, and the pad of the same material is remained between the electrodes on the substrate 31. |
