摘要 |
PURPOSE:To precisely attach a glass pattern onto a flat semiconductor wafer by printing and calcining the glass pattern thereon before attaching the glass on a main junction by a printing method. CONSTITUTION:P type regions 2, 3 are formed on both main surfaces of an N type Si substrate 1, and main junctions 4, 5 are formed thereon. Then, an opening is partly formed at an Si oxide film to form an N type region 6 therein. At this time glass 9 is attached onto an Si oxide film 8 by printing in desired width on the junction 7 in the boundary between the N type region and the P type region, and is calcined. Thereafter, wax 10 is coated on the main other surface excluding predetermined region for forming a mesa groove thereon. After the Si oxide film of the opening 11 is then etched, the Si is etched to desired position to form a mesa groove. Subsequently, the wax 10 is removed, and the glass 14 is attached to the mesa groove, is calcined, and is bonded by fusion. |