| 摘要 |
PURPOSE:To obtain a highly sensitive sensor by forming a V-shaped concave portion in the surface of a semiconductor substrate, providing a diode which is to become a photosensor by diffusing inpurities in the inner wall, forming a protecting film having a shape of a convex lens which covers said concave portion, and employing the substrates having the same area. CONSTITUTION:The protecting film 3 is deposited on a one-conductive type semiconductor substrate 1, a region, in which the V-shaped concave portion 8 is to be formed, is removed by a photoetching method, and the concave portion 8 is formed by using the anisotropic etching liquid. In this case, if the surface of the substrate is a (100) face and the flat cut is a (110) face, a blended liquid of ethylene diamine and catechol is used as the etching liquid, and a (111) face is exposed on the side of the concave portion 8. Then, impurities, which have reversive conductive type with respect to the substrate 1, are diffused, thereby regions 2 and 2' are formed on the inner wall of the concave portion 8. Then, a glass protecting film 10 with a low melting point is deposited on all the surface, and the concave portion 8 is covered by the photoetching. Thereafter, the high temperature heat treatment is perfomed, the protecting film 8 is reflowed, thereby a lens effect 10' is yielded. |
