| 摘要 |
PURPOSE:To enable formation of an Si3N4 film at low temperature and fast speed by heating an Si substrate is reaction gas excited by far ultraviolet rays of specific wavelength and forming the film on the substrate. CONSTITUTION:A susceptor 6 for retaining an Si substrate 5 to be treated is placed on a resistance heaating plate 4 in a reaction chamber 3, and far ultraviolet rays of 1849Angstrom and 1235Angstrom are then irradiated through the wall of the reaction chamber 3 while flowing NH3 gas from a gas guide tube 1 into the chamber 3. Then, the plate 4 is raised at temperature to heat the substrate 5. In this state the gas is excited to NH2 and H by the far ultraviolet rays having a wavelength of 1849Angstrom , and NH2 is excited by the far ultraviolet rays having a wavelength of 1235Angstrom to produce activated nitrigen atoms. Subsequently, the activated nitrogen atoms and the substrate 5 are reacted to form an Si3N4 film on the substrate 5. Since this reaction is shortened at lower temperature by approx. 200 deg.C as compared with the conventional method and 1/2-1/4 in forming time, defects to be produced on the substrate may be largely reduced. |
