发明名称 |
Metallization for integrated circuits |
摘要 |
The sharp features that appear on metallization patterns defined by conventional etching processes can be eliminated by instantaneous melting with short laser pulses. Flow is minimized due to the brevity of the lifetime of the molten state but surface tension removes the sharp corners. With polysilicon metallization conductivity is also improved.
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申请公布号 |
US4258078(A) |
申请公布日期 |
1981.03.24 |
申请号 |
US19790105918 |
申请日期 |
1979.12.21 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
CELLER, GEORGE K.;SEIDEL, THOMAS E. |
分类号 |
H01L21/263;H01L21/268;H01L21/321;H01L21/768;H01L23/525;(IPC1-7):B05D3/06 |
主分类号 |
H01L21/263 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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