| 摘要 |
PURPOSE:To obtain an electrode whose bonding property is very excellent without losing the ohmic property at all by specifying the materials and compositions of the electrode which is formed on a P type layer of the compound-semiconductor light emitting element containing Ga. CONSTITUTION:A P type GaP layer 22 is epitaxially grown in a liquid phase on a substrate 21 containing Ga such as N type GaP, GaAs, CaAsP, and the like, and a PN junction 23 is yielded. N-side electrodes 25 with a specified pattern comprising Au-Si alloy are formed on the back surface of the substrate 21. Then, a P-side electrode of a specified pattern is formed on a layer 22. In this case, the materials are selected as follows. An alloy layer 24a, which comprises the main component of Au, and Be or Zn, is used as the lowest lsyer; a metal layer 24b such as Ta, Mo, W, Nb, and the like is used as the medium layer; an Au layer 24c is used as the uppermost layer; thereby the layered electrode is formed. At this time, the ratio of the strength of the secondary ions of Ga atoms against A atoms in the vicinity of the surface of the Au layer is 0.2 or less, and the ratio of the strength of the Be atoms or Zn atoms against the Au atoms is 0.3 or less. |
