SEMICONDUCTOR DEVICE

摘要

PURPOSE:To constitute a resistor having a precise value in a small occupying space by controlling the value of the resistor by the area of a through hole provided in an interlayer insulating resistor film. CONSTITUTION:A highly resistive polycrystal silicon 2 and an interlayer insulating film 3 are sequentially formed on a low resistive polycrystal silicon 1 for wiring or gates of MOS transistors. A through hole 4 is perforated in said interlayer insulating film 3, and a wiring conductive layer 5 is formed through said through hole 4. If the resistivity and the film thickness of the highly resistive polycrystal silicon 2 are determined to be constant, the value of the resistor is determined by only the area of the through hole 4.