| 摘要 |
<p>PURPOSE:To prevent the breaking of an electrode conductor film in a semiconductor device by a method wherein an Au adhesion promoting layer and a conductor layer are provided in order spreading over an Si exposing layer and an SiO2 face provided on the Si, and an improved adhesion layer is laid under the improved adhesion layer. CONSTITUTION:A P<+> type region 2 is formed on the surface of an N type Si substrate 1, and an SiO2 film 3 is formed on the surface. An opening is provided in the SiO2 film on the P<+> type region, and a Cr layer 5 and an Ag layer 6, for example, are piled up in order interlaying an adhesion promoting layer 4 containing Au as the main component and Ga to compose an electrode structure. To improve the adhesiveness, layers 8, 9 of Cr, Mo, polycrystalline Si, etc., are provided under the adhesion promoting layer. By this way, as the adhesiveness between the adhesion promoting layer and the SiO2 layer are improved, the peeling off of the adhesion promoting layer and the breaking of the electrode wiring layer can be prevented.</p> |
