| 摘要 |
PURPOSE:To make high-withstand voltage and high hfe a high density base region provided at a single crystal island of a lateral transistor which is separated from a dielectric by a method wherein a distance between an emitter and the high-density base is made shorter than that between a collector and the high-density base. CONSTITUTION:A p type emitter 4 is formed with SiO2 film 1 near the center of a single crystal island 3 which is insulation-separated from a multicrystal Si2, and a p type collector 5 is formed around the emitter 4. An n<+> high-density diffusing region 6 projected in the lower part of the emitter is formed on the single crystal island provided along SiO2 film for insulation. The re-fusion in the base region is reduced by making the space between the collector and the n<+> high-density diffusing region 6. The order of the width of depletion layer and on the other hand, by making the distance between the emitter and n<+> region shorter. Further, with provision of the n<+> high-density diffusing region 6 not only is the single crystal island but also at the side wall, a carrier is reflected by a diffusion potential and accordingly an active current is increased. |
