| 摘要 |
PURPOSE:To improve the breakdown durability and the reliability of the semiconductor device by forming P type diffused region shallower than a base region in high density including at least a base and collector junction in one main surface of a substrate. CONSTITUTION:The first P type conductivity base region 2 is formed by diffusion on one main surface of a collector region 1 as an N type conductivity substrate, and the second P type conductivity base region 12 equal to the base region 2 is then formed shallower than the base region 2 in high density including at least in one main surface a base and collector junction. Then, an emitter region 3 is formed by a selectively diffusing technique. Thereafter, openings are perforated at an SiO2 layer 4 on the main surface, and a base electrode 12a and an emitter elecctrode 3a are mounted therethrough. |
