| 发明名称 |
A method of manufacturing a semiconductor device. |
| 摘要 |
<p>A structure of conductive layers (12) is formed on a substrate (11). Photoresist (10) is formed over the conductive layers (12). The upper surraces of the substrate and conductive layers are covered with liquid glass (13) which is hardened. …<??>Heat treatment is effected to deform and shrink the photoresist (10) to detach the glass parts (13) on the photoresist (10) from glass parts (13) on the substrate and to expose the sides of the photoresist for etching. …<??>The photoresist (10) is removed by etching.</p> |
| 申请公布号 |
EP0025261(A1) |
申请公布日期 |
1981.03.18 |
| 申请号 |
EP19800302337 |
申请日期 |
1980.07.10 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
KURAHASHI, TOSHIO;TOKITOMO, KAZUO;KIRISEKO, TADASHI |
| 分类号 |
H01L21/027;H01L21/306;H01L21/316;H01L21/768;H01L23/532;(IPC1-7):01L21/31 |
主分类号 |
H01L21/027 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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