| 摘要 |
PURPOSE:To secure high manufacturing yield, uniform performance and mass productivity of the compound semiconductor device by precisely defining one type of resist mask in a step when setting the relative position relationship of essential components. CONSTITUTION:An insulating film 12 is coated on the surface of a semi-insulating GaAs substrate 11, and with the film 13 as a mask an N type active laqer 14 is formed thereon. Then, an insulating film 15 is formed thereon, a resist mask 16 is formed thereon, and openings are perforated at the film 15. Thereafter, a resist mask 16 is formed thereon, and openings are perforated at the film 15. Thereafter, a resist mask 17 is formed thereon, and N<+> type layers 18 and 19 of source and drain electrode regions are formed thereon. After heat treating it, a resist mask 20 is formed thereon, evaporation and lift-off are conducted to form ohmic electrode metallic layers 21 and 22 thereon, a resist film 23 is formed thereon, and Schottky juntion electrode 24, source and drain wires 25 and 26 are formed thereon. Finally, the resist mask 23 is removed therefrom. |
