| 摘要 |
PURPOSE:To avoid the sudden unexpected damages on the surface of a capacitor in the assembling processes by forming a protective layer on the electrode portion of a thin film capacitor and applying an overlaying resin thereon. CONSTITUTION:A beta-Ta film 2 is attached on a ceramic substrate 1, and a capacitor pattern is selectively formed. Then, a dielectric film 3 is formed on a portion of said beta-Ta film 2, and a resistor layer 4 is further formed. After a dielectric film 5 having a desired capacitive density has been obtained, a nichrome alloy layer 6, a palladium layer 7, and a metal 8 are sequentially evaporated as electrode materials; and a desired thin film RC circuit network is formed by using the photoetching technology. Then, a silicon resin is formed as an electrode protecting layer 9 on the upper electrode portion of the thin film capacitor of the thin film RC circuit network. Thereafter, baking and the adjustment of the resistance value are performed, a lead frame 10 and a beam-lead type silicon IC 11 are connected, and an overlaying resin 12 is applied. |
