| 摘要 |
PURPOSE:To prevent electrostatic breakdown of the MOS semiconductor device owing to surging input by increasing the channel length at the portion where a current concentration feasibly occurs at the nearest portion to the surge input. CONSTITUTION:A source and a drain diffused layers 2 and 3 formed in an Si substrate 1. An aluminum wire 7 making contact with the source layer 2 is connected to a ground side, and an aluminum wire 8 making contact with the drain layer 3 is connected to an output side. The channel length l' of a part of a gate becoming a surge input side is formed larger than the channel length of other portion. The source contact is partly omitted in a portion 9 where the source interposed between two gates is reduced in width narrower, an interval between the source and the contact of the surge input side is increased to limit the current through a resistor R disposed therebetween . |
