| 摘要 |
PURPOSE:To form multilayered wiring whose surface is flat by laminating the insulating layers whose etching rates are different; thereafter opening a hole, side-etching the lower layer, depositing a metal film, and forming a metal wiring by employing the lift-off method. CONSTITUTION:An oxide film 6, semiconductor layers 4 and 5 are formed on a substrate 1 on which element is formed. Then, an SiO2 film 7, a metal 8, and a nitride film 9 are formed, and a hole is opened by the photoetching. At this time, the nitride film 9 and the SiO2 film 7 are vertically etched by the sputter etching, and the metal film 8 is side-etched in liquid. Then Al is evaporated in a vacuum, the metal film 8 is etched out, unnecessary Al is lifted off, and an Al electrode 11 is formed. The same process is repeated and the multilayered wiring is formed. In this method, the metal wiring layer whose surface is flat is realized, and the multilayered wiring with a high density and a high yield rate can be formed. |
