| 摘要 |
PURPOSE:To execute a doping operation of good controllability by a method wherein bromine is contained in an n-type zinc selenide semiconductor doped with bromine. CONSTITUTION:Bromine of 10<15>-10<19> atoms.cm<-3> is contained in an n-type zinc selenide semiconductor doped with bromine. In order to form this n-type zinc selenide semiconductor, e.g., a hydride or an organic metal compound containing an element of selenium, an organic metal compound containing zinc and a raw material for dopant element supply use are transferred onto a crystalline substrate 6 which has been heated together with a carrier gas, and n-type zinc selenide is grown on the substrate 6. During this process, bromine or hydrogen bromine is used as the raw material for dopant element supply use. By this setup, even when a doping operation is executed at high concentration, a strain is hardly caused inside a crystal, and a deep level due to the strain is not formed; the doping operation can be executed with good controllability. |
