| 摘要 |
PURPOSE:To obtain a capacity good suited for high-frequency IC by reducing influence of series resistance, by forming a base region on a semiconductor layer and by finely dividing an emitter region when it is provided in the base region. CONSTITUTION:An N<+> type embedded region 3 is dispersingly formed on a P type Si substrate 1, an N type layer 4 is allowed to grow epitaxially on an entire surface, and the layer 4 is formed in an islandlike shape by a P<+> type insulated and separated region 2. And then, in thus formed layer, a P type base region 5 is dispersingly formed and provided with an N<+> type emitter region, at this time, the emitter region is finely divided to form plural emitter regions, such as those numbered 14 and 15. And then, an entire surface is covered with an SiO2 film 7 and provided with holes, and electrodes 17, 16 and 18 are attached to the region 5 in such a manner as to be located between and outside the regions 14 and 15, and the electrodes are connected to a common terminal 11. It is possible, by doing so, to reduce an emitter series resistance and also to improve effect of a capacitor consisting of an emitter and a base. |
