| 摘要 |
PURPOSE:To obtain a fine pattern by applying a positive resist mask to the negative film on a semiconductor substrate and by opening the negative resist film wherein a conductor thin film is formed on the exposed substrate and an unnecessary conductor is lifted off with the resist film. CONSTITUTION:A negative resist 22 is applied to a wafer 21 completed element formation and the resist and wafer are polymerized by exposure or by heat treatment and positive resist masks 23 are applied on the negative resist 22. The resist 22 is ashed by O2 plasma and the flaws of the positive resists 23 generate if the wafer 21 is exposed. Al24 is evaporated and after immersing in a resist exfoliation liquid, the resists, 22, 23 and the Al24 located on the resists 22, 23 will be removed. And burr will not occur and a high precision Al pattern will be formed. |
