| 发明名称 |
INSTRUMENT EMPLOYING A CHARGE-FLOW TRANSISITOR |
| 摘要 |
A charge-flow transistor having a gapped gate electrode and a thin-film sensor material in the gap, which sensor material is sensitive to a property of the ambient environment and has a surface conductance that differs substantially from the bulk conductance thereof. The charge-flow transistor is shown as part of an instrument operable to measure said property. |
| 申请公布号 |
GB1586011(A) |
申请公布日期 |
1981.03.11 |
| 申请号 |
GB19780010634 |
申请日期 |
1978.03.17 |
| 申请人 |
MASSACUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
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| 分类号 |
G01N27/00;G01N27/12;G01N27/414;G08B17/06;G08B17/10;G08B17/117;G08B21/00;G08B21/16;H01L29/423;H01L29/49;H01L29/78;H01L49/00 |
主分类号 |
G01N27/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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